Labs

two target dc rf magnetron sputtering coating equipment Magnetron sputtering coating equipment is a special laboratory coating instrument developed by our company. The equipment can be equipped with DC power supply and RF power supply. The power ranges from 500W to 1000W. It can be used to prepare single or multilayer ferroelectric thin films, conductive films, alloy films, semiconductor films, ceramic films, dielectric films, optical films, etc. Compared with the conventional plasma sputtering, magnetron sputtering has the advantages of high energy, high speed, high deposition rate and low sample temperature rise. The magnetron target is equipped with water-cooled interlayer. The water cooler can effectively take away heat and avoid heat accumulation on the target surface, so that the magnetron coating can work stably for a long time. After compact design, the balance of volume and performance is realized, the appearance is beautiful and the function is comprehensive. The whole machine is controlled by touch screen and built-in one button coating program, which is easy to operate and is an ideal equipment for preparing thin films in laboratory. Technical parameter 1. Power supply AC220V，50Hz 2. Whole power 6KW 3. Limit Vacuum Degree 5x10-4Pa 4. Sample table parameters Size φ150mm Heat temp 500℃ max. Temp control ±1℃ Rotation speed 1-20rpm adjustable 4. Magnetron sputtering head parameters Quantity:2 Size:2” Cooling mode Water cooled，flow 10L/min required Water chiller 10L/min Circulating water cooling 5. Vacuum chamber Size φ300mm X 340mm H Material SUS Watch window φ100mm Opening mode open type, easy to replace target 6. Gas flow controller One-channel,200sccm Ar； 7. Vacuum pump:A molecular pump system，pumping 600L/S 8.Quartz vibrating film thickness gauge One set， resolution 0.10 angstrom 9. Sputter power source DC power supply:500W-1000W，Suitable for preparing metal films RF power supply500W-1000W，Suitable for non - metallic films 10. Operating mode:All-in-one computer operation 11. Overall Dimensions 1090mm X 900mm X 1250mm 12. Total weight 350kg

Minimum Order: 1 bags

two target rf magnetron sputtering coating equipment Magnetron sputtering coating equipment is a special laboratory coating instrument developed by our company. The equipment can be equipped with DC power supply and RF power supply. The power ranges from 500W to 1000W. It can be used to prepare single or multilayer ferroelectric thin films, conductive films, alloy films, semiconductor films, ceramic films, dielectric films, optical films, etc. Compared with the conventional plasma sputtering, magnetron sputtering has the advantages of high energy, high speed, high deposition rate and low sample temperature rise. The magnetron target is equipped with water-cooled interlayer. The water cooler can effectively take away heat and avoid heat accumulation on the target surface, so that the magnetron coating can work stably for a long time. After compact design, the balance of volume and performance is realized, the appearance is beautiful and the function is comprehensive. The whole machine is controlled by touch screen and built-in one button coating program, which is easy to operate and is an ideal equipment for preparing thin films in laboratory. Technical parameter 1. Power supply AC220V，50Hz 2. Whole power 6KW 3. Limit Vacuum Degree 5x10-4Pa 4. Sample table parameters Size φ150mm Heat temp 500℃ max. Temp control ±1℃ Rotation speed 1-20rpm adjustable 4. Magnetron sputtering head parameters Quantity:2 Size:2” Cooling mode Water cooled，flow 10L/min required Water chiller 10L/min Circulating water cooling 5. Vacuum chamber Size φ300mm X 340mm H Material SUS Watch window φ100mm Opening mode open type, easy to replace target 6. Gas flow controller One-channel,200sccm Ar； 7. Vacuum pump:A molecular pump system，pumping 600L/S 8.Quartz vibrating film thickness gauge One set， resolution 0.10 angstrom 9. Sputter power source RF power supply500W-1000W，Suitable for non - metallic films 10. Operating mode:All-in-one computer operation 11. Overall Dimensions 1090mm X 900mm X 1250mm 12. Total weight 350kg

Minimum Order: 1 bags

dual target DC magnetron sputtering coating equipment Magnetron sputtering coating equipment is a special laboratory coating instrument developed by our company. The equipment can be equipped with DC power supply and RF power supply. The power ranges from 500W to 1000W. It can be used to prepare single or multilayer ferroelectric thin films, conductive films, alloy films, semiconductor films, ceramic films, dielectric films, optical films, etc. Compared with the conventional plasma sputtering, magnetron sputtering has the advantages of high energy, high speed, high deposition rate and low sample temperature rise. The magnetron target is equipped with water-cooled interlayer. The water cooler can effectively take away heat and avoid heat accumulation on the target surface, so that the magnetron coating can work stably for a long time. After compact design, the balance of volume and performance is realized, the appearance is beautiful and the function is comprehensive. The whole machine is controlled by touch screen and built-in one button coating program, which is easy to operate and is an ideal equipment for preparing thin films in laboratory. Technical parameter 1. Power supply AC220V，50Hz 2. Whole power 6KW 3. Limit Vacuum Degree 5x10-4Pa 4. Sample table parameters Size φ150mm Heat temp 500℃ max. Temp control ±1℃ Rotation speed 1-20rpm adjustable 4. Magnetron sputtering head parameters Quantity:2 Size:2” Cooling mode Water cooled，flow 10L/min required Water chiller 10L/min Circulating water cooling 5. Vacuum chamber Size φ300mm X 340mm H Material SUS Watch window φ100mm Opening mode open type, easy to replace target 6. Gas flow controller One-channel,200sccm Ar； 7. Vacuum pump:A molecular pump system，pumping 600L/S 8.Quartz vibrating film thickness gauge One set， resolution 0.10 angstrom 9. Sputter power source DC power supply:500W-1000W，Suitable for preparing metal films 10. Operating mode:All-in-one computer operation 11. Overall Dimensions 1090mm X 900mm X 1250mm 12. Total weight 350kg

Minimum Order: 1 bags

Single target rf magnetron sputtering coating equipment Magnetron sputtering coating equipment is a special laboratory coating instrument developed by our company. The equipment can be equipped with DC power supply and RF power supply. The power ranges from 500W to 1000W. It can be used to prepare single or multilayer ferroelectric thin films, conductive films, alloy films, semiconductor films, ceramic films, dielectric films, optical films, etc. Compared with the conventional plasma sputtering, magnetron sputtering has the advantages of high energy, high speed, high deposition rate and low sample temperature rise. The magnetron target is equipped with water-cooled interlayer. The water cooler can effectively take away heat and avoid heat accumulation on the target surface, so that the magnetron coating can work stably for a long time. After compact design, the balance of volume and performance is realized, the appearance is beautiful and the function is comprehensive. The whole machine is controlled by touch screen and built-in one button coating program, which is easy to operate and is an ideal equipment for preparing thin films in laboratory. Technical parameter 1. Power supply AC220V，50Hz 2. Whole power 6KW 3. Limit Vacuum Degree 5x10-4Pa 4. Sample table parameters Size φ150mm Heat temp 500℃ max. Temp control ±1℃ Rotation speed 1-20rpm adjustable 4. Magnetron sputtering head parameters Quantity:1 Size:2” Cooling mode Water cooled，flow 10L/min required Water chiller 10L/min Circulating water cooling 5. Vacuum chamber Size φ300mm X 340mm H Material SUS Watch window φ100mm Opening mode open type, easy to replace target 6. Gas flow controller One-channel,200sccm Ar； 7. Vacuum pump:A molecular pump system，pumping 600L/S 8.Quartz vibrating film thickness gauge One set， resolution 0.10 angstrom 9. Sputter power source RF power supply500W-1000W，Suitable for non - metallic films 10. Operating mode:All-in-one computer operation 11. Overall Dimensions 1090mm X 900mm X 1250mm 12. Total weight 350kg

Minimum Order: 1 bags

Single target DC magnetron sputtering coating equipment Magnetron sputtering coating equipment is a special laboratory coating instrument developed by our company. The equipment can be equipped with DC power supply and RF power supply. The power ranges from 500W to 1000W. It can be used to prepare single or multilayer ferroelectric thin films, conductive films, alloy films, semiconductor films, ceramic films, dielectric films, optical films, etc. Compared with the conventional plasma sputtering, magnetron sputtering has the advantages of high energy, high speed, high deposition rate and low sample temperature rise. The magnetron target is equipped with water-cooled interlayer. The water cooler can effectively take away heat and avoid heat accumulation on the target surface, so that the magnetron coating can work stably for a long time. After compact design, the balance of volume and performance is realized, the appearance is beautiful and the function is comprehensive. The whole machine is controlled by touch screen and built-in one button coating program, which is easy to operate and is an ideal equipment for preparing thin films in laboratory. Technical parameter 1. Power supply AC220V，50Hz 2. Whole power 6KW 3. Limit Vacuum Degree 5x10-4Pa 4. Sample table parameters Size φ150mm Heat temp 500℃ max. Temp control ±1℃ Rotation speed 1-20rpm adjustable 4. Magnetron sputtering head parameters Quantity:1 Size:2” Cooling mode Water cooled，flow 10L/min required Water chiller 10L/min Circulating water cooling 5. Vacuum chamber Size φ300mm X 340mm H Material SUS Watch window φ100mm Opening mode open type, easy to replace target 6. Gas flow controller One-channel,200sccm Ar； 7. Vacuum pump:A molecular pump system，pumping 600L/S 8.Quartz vibrating film thickness gauge One set， resolution 0.10 angstrom 9. Sputter power source DC power supply:500W-1000W，Suitable for preparing metal films 10. Operating mode:All-in-one computer operation 11. Overall Dimensions 1090mm X 900mm X 1250mm 12. Total weight 350kg

Minimum Order: 1 bags

Chemical vapor deposition (CVD) refers to the method of chemical gas or steam reacting on the substrate surface to synthesize coatings or nano materials. It is the most widely used technology in semiconductor industry to deposit a variety of materials, including a wide range of insulating materials, most metal materials and metal alloy materials. CY-O1200-50IIIT-3Z-HV 1200℃ three heating zone high vacuum CVD system consists of a three-heating zone tube furnace, a three-channel mass flow meter and a high vacuum molecular pump set. It is suitable for high-temperature sintering, metal annealing, quality inspection, etc. in universities, research institutes, industrial and mining enterprises, especially for CVD experiments that require a variety of gas mixing atmospheres. Vacuum tube furnace Model CY-O1200-50IIIT Tube material High purity quartz Tube diameter 50mm (Optional 60mm, 80mm, 100mm) Tube length 1300mm Furnace chamber length 1060mm Heating zone length 300mm+300mm+300mm Operating temperature 0～1100℃ Temperature control   accuracy ±1℃ Temperature control   mode 30 or 50 segment program temperature control Display mode LCD Sealing method 304 stainless steel vacuum flange Flange interface 1/4" ferrule connector, KF16/25/40 joint Vacuum 4.4E-3Pa Power supply AC:220V 50/60Hz Gas supply system Model CY-3Z Gas channel 3-channel Measuring unit Gas mass flow meter Measuring range A channel: 0～100 SCCM H2 gas Remarks: If you need other ranges or gas types, you need to specify when ordering. According to the customer's specific requirements, the flow meter of the corresponding gas type and range can be selected. B channel: 0～300SCCM N2 gas C channel: 0～500SCCM Ar gas measurement accuracy ±1.0%F.S Pipe pressure   resistance 3MPa Working pressure   difference 50～300KPa Connecting pipe 304 stainless steel Gas channel 304 stainless steel needle valve Interface specification 1/4" ferrule connector for gas inlet and outlet Exhaust system Model CY-GZK103-A Molecular pump CY-600 Backing pump Rotary vane pump Pumping rate Molecular pump: 600L/S Comprehensive gas pumping performance: 30 minutes vacuum can reach: 1.0E-3Pa Rotary vane pump: 1.1L/S Pumping interface KF40 Exhaust interface KF16 Vacuum measurement Compound vacuum gauge: Resistance gauge + ionization gauge Ultimate vacuum 1.0E-5Pa Power supply AC:220V 50/60Hz

Minimum Order: 1 bags

Chemical vapor deposition (CVD) refers to the method of chemical gas or steam reacting on the substrate surface to synthesize coatings or nano materials. It is the most widely used technology in semiconductor industry to deposit a variety of materials, including a wide range of insulating materials, most metal materials and metal alloy materials CY-O1200-50IIIT-3F-LV 1200℃ three heating zone low vacuum CVD furnace consists of a three-heating zone tube furnace, a three-channel float flow meter and a double stage rotary vane vacuum pump It is suitable for high-temperature sintering, metal annealing, quality inspection, etc. in universities, research institutes, industrial and mining enterprises, especially for CVD experiments that require a variety of gas mixing atmospheres. Vacuum tube   furnace Model CY-O1200-50IIIT Tube material High purity quartz Tube diameter 50mm (optional: 60mm, 80mm, 100mm) Tube length 1300mm Furnace chamber   length 1060mm Heating zone   length 300mm+300mm+300mm Operating   temperature 0～1100℃ Temperature   control accuracy ±1℃ Temperature  control mode 30 or 50 segment program temperature control Display mode LCD Sealing   method 304 stainless steel vacuum flange Flange   interface 1/4" ferrule connector, KF16/25/40 joint Vacuum 4.4E-3Pa Power supply AC:220V   50/60Hz Gas supply   system Model CY-3F Gas channel 3-channel Measuring   unit Gas float flowmeter Measuring   range A channel: 0～100ml H2 gas Remarks: If you need other ranges or gas types, you need to specify when ordering. According to the customer's specific requirements, the flow meter of the   corresponding gas type and range can be selected. B channel: 16～160ml N2 gas C channel: 25～250ml Ar gas measurement  accuracy ±2.0% Pipe pressure resistance 3MPa Working   pressure difference 50～300KPa Connecting   pipe 304 stainless steel Gas channel 304 stainless steel needle valve Interface   specification 1/4" ferrule connector for gas inlet and outlet Exhaust   system Mechanical   pump Rotary vane pump Pumping rate 1.1L/S    Exhaust   interface KF16 Vacuum   measurement Resistance gauge Ultimate   vacuum 1.0E-1Pa Power supply AC:220V   50/60Hz Pumping   interface KF16

Minimum Order: 1 bags

Chemical vapor deposition (CVD) refers to a method in which chemical gases or steam react on the surface of a substrate to synthesize coatings or nanomaterials. It is the most widely used technology in the semiconductor industry to deposit a variety of materials, including a wide range of insulating materials, Most metal materials and metal alloy materials. CY-O1200-50IIIT-3F-HV 1200℃ three heating zone high vacuum CVD system consists of a three-heating zone tube furnace, a three-channel float flow meter and a high vacuum molecular pump set.The system is also equipped with a precision molecular pump set, which can achieve a vacuum degree of 1.0E-3pa, which can provide users with a purer and more stringent experimental environment than ordinary mechanical pumps. Vacuum tube   furnace Model CY-O1200-50IIIT Tube material High purity quartz Tube diameter 50mm(optional: 60mm, 80mm, 100mm) Tube length 1300mm Furnace chamber length 1060mm Heating zone   length 300mm+300mm+300mm Operating   temperature 0～1100℃ Temperature   control accuracy ±1℃ Temperature   control mode 30 or 50 segment program temperature control Display mode LCD Sealing   method 304 stainless steel vacuum flange Flange   interface 1/4" ferrule connector, KF16/25/40 joint Vacuum 4.4E-3Pa Power supply AC:220V   50/60Hz Gas supply   system Model CY-3F Gas channel 3-channel Measuring unit Gas float flowmeter Measuring   range A channel: 0～100ml H2 gas Remarks: If you need other ranges or gas types, you need to specify when ordering.   According to the customer's specific requirements, the flow meter of the   corresponding gas type and range can be selected. B channel: 16～160ml N2 gas C channel: 25～250ml Ar gas measurement   accuracy ±2.0% Pipe pressure resistance 3MPa Working   pressure difference 50～300KPa Connecting   pipe 304 stainless steel Gas channel 304 stainless steel needle valve Interface   specification 1/4" ferrule connector for gas inlet and outlet Exhaust   system Model CY-GZK103-A Molecular pump CY-600 Backing pump Rotary vane pump Pumping rate Molecular pump: 600L/S Comprehensive   gas pumping performance: 30 minutes vacuum can reach: 1.0E-3Pa Rotary vane pump: 1.1L/S Pumping   interface KF40 Exhaust   interface KF16 Vacuum   measurement Compound vacuum gauge: Resistance gauge + ionization gauge Ultimate   vacuum 1.0E-5Pa Power supply AC:220V   50/60Hz

Minimum Order: 1 bags

Chemical vapor deposition (CVD) refers to a method in which chemical gases or steam react on the surface of a substrate to synthesize coatings or nanomaterials. It is the most widely used technology in the semiconductor industry to deposit a variety of materials, including a wide range of insulating materials, Most metal materials and metal alloy materials. CY-O1200-50IIIT-3F-LV 1200℃ three heating zone low vacuum CVD system consists of a three-heating zone tube furnace, a three-channel float flow meter and a double stage rotary vane vacuum pump.It is suitable for high-temperature sintering, metal annealing, quality inspection, etc. in universities, research institutes, industrial and mining enterprises, especially for CVD experiments that require a variety of gas mixing atmospheres. Vacuum tube   furnace Model CY-O1200-50IIIT Tube material High purity quartz Tube diameter 50mm (optional: 60mm, 80mm, 100mm) Tube length 1300mm Furnace chamber   length 1060mm Heating zone   length 300mm+300mm+300mm Operating   temperature 0～1100℃ Temperature   control accuracy ±1℃ Temperature  control mode 30 or 50 segment program temperature control Display mode LCD Sealing   method 304 stainless steel vacuum flange Flange   interface 1/4" ferrule connector, KF16/25/40 joint Vacuum 4.4E-3Pa Power supply AC:220V   50/60Hz Gas supply   system Model CY-3F Gas channel 3-channel Measuring   unit Gas float flowmeter Measuring   range A channel: 0～100ml H2 gas Remarks: If you need other ranges or gas types, you need to specify when ordering. According to the customer's specific requirements, the flow meter of the   corresponding gas type and range can be selected. B channel: 16～160ml N2 gas C channel: 25～250ml Ar gas measurement  accuracy ±2.0% Pipe pressure resistance 3MPa Working   pressure difference 50～300KPa Connecting   pipe 304 stainless steel Gas channel 304 stainless steel needle valve Interface   specification 1/4" ferrule connector for gas inlet and outlet Exhaust   system Mechanical   pump Rotary vane pump Pumping rate 1.1L/S    Exhaust   interface KF16 Vacuum   measurement Resistance gauge Ultimate   vacuum 1.0E-1Pa Power supply AC:220V   50/60Hz Pumping   interface KF16

Minimum Order: 1 bags

Chemical vapor deposition (CVD) refers to a method in which chemical gases or steam react on the surface of a substrate to synthesize coatings or nanomaterials. It is the most widely used technology in the semiconductor industry to deposit a variety of materials, including a wide range of insulating materials, Most metal materials and metal alloy materials. CY-O1200-50IIT-3Z-HV 1200℃ two heating zone high vacuum CVD system consists of a two-heating zone tube furnace, a three-channel float flow meter and a high vacuum molecular pump set. It is suitable for high-temperature sintering, metal annealing, quality inspection, etc. in universities, research institutes, industrial and mining enterprises, especially for CVD experiments that require a variety of gas mixing atmospheres. Vacuum tube furnace Model CY-O1200-50IIT Tube material High purity quartz Tube diameter 50mm Tube length 1000mm Furnace chamber length 440mm Heating zone length 200mm+200mm Operating temperature 0～1100℃ Temperature control   accuracy ±1℃ Temperature control   mode 30 or 50 segment program temperature control Display mode LCD Sealing method 304 stainless steel vacuum flange Flange interface 1/4" ferrule connector, KF16/25/40 joint Vacuum 4.4E-3Pa Power supply AC:220V 50/60Hz Gas supply system Model CY-3Z Gas channel 3-channel Measuring unit Gas mass flow meter Measuring range A channel: 0～100SCCM H2 gas Remarks: If you need   other ranges or gas types, you need to specify when ordering. According to the customer's specific requirements, the flow meter of the corresponding gas type and range can be selected. B channel: 0～300SCCM N2 gas C channel: 0～500SCCM Ar gas measurement accuracy ±1.0%F.S Pipe pressure   resistance 3MPa Working pressure   difference 50～300KPa Connecting pipe 304 stainless steel Gas channel 304 stainless steel needle valve Interface specification 1/4" ferrule connector for gas inlet and outlet Exhaust system Model CY-GZK103-A Molecular pump CY-600 Backing pump Rotary vane pump Pumping rate Molecular pump: 600L/S Comprehensive gas   pumping performance: 30 minutes vacuum can reach: 1.0E-3Pa Rotary vane pump: 1.1L/S Pumping interface KF40 Exhaust interface KF16 Vacuum measurement Compound vacuum gauge: Resistance gauge + ionization gauge Ultimate vacuum 1.0E-5Pa Power supply AC:220V 50/60Hz

Minimum Order: 1 bags

Chemical vapor deposition (CVD) refers to a method in which chemical gases or steam react on the surface of a substrate to synthesize coatings or nanomaterials. It is the most widely used technology in the semiconductor industry to deposit a variety of materials, including a wide range of insulating materials, Most metal materials and metal alloy materials. CY- O1200-50IIT-3Z-LV 1200℃ two zone low vacuum CVD system consists of a two- heating zone tube furnace, a three-channel float flow meter and a double stage rotary vane vacuum pump. It is suitable for high-temperature sintering, metal annealing, quality inspection, etc. in universities, research institutes, industrial and mining enterprises, especially for CVD experiments that require a variety of gas mixing atmospheres. Vacuum tube furnace Model CY- O1200-50IIT Tube material High purity quartz Tube diameter 50mm (Optional 60mm, 80mm, 100mm) Tube length 1000mm Furnace chamber length 440mm Heating zone length 200mm+200mm Operating temperature 0～1100℃ Temperature control   accuracy ±1℃ Temperature control mode 30 or 50 segment program temperature control Display mode LCD Sealing method 304 stainless steel vacuum flange Flange interface 1/4" ferrule connector, KF16/25/40 joint Vacuum 4.4E-3Pa Power supply AC:220V 50/60Hz Gas supply system Model CY-3Z Gas channel 3-channel Measuring unit Gas mass flow meter Measuring range A channel: 0～100SCCM H2 gas Remarks: If you need   other ranges or gas types, you need to specify when ordering. According to the customer's specific requirements, the flow meter of the corresponding gas type and range can be selected. B channel: 0～300SCCM N2 gas C channel: 0～500SCCM Ar gas measurement accuracy ±1.0%F.S Pipe pressure   resistance 3MPa Working pressure   difference 50～300KPa Connecting pipe 304 stainless steel Gas channel 304 stainless steel needle valve Interface specification 1/4" ferrule connector for gas inlet and outlet Exhaust system Mechanical pump Rotary vane pump Pumping rate 1.1L/S Exhaust interface KF16 Vacuum measurement Resistance gauge Ultimate vacuum 1.0E-1Pa Power supply AC:220V 50/60Hz Pumping interface KF16

Minimum Order: 1 bags

Chemical vapor deposition (CVD) refers to a method in which chemical gases or steam react on the surface of a substrate to synthesize coatings or nanomaterials. It is the most widely used technology in the semiconductor industry to deposit a variety of materials, including a wide range of insulating materials, Most metal materials and metal alloy materials. CY-O1200-50IIT-3F-HV 1200℃ two heating zone high vacuum CVD system consists of a two-heating zone tube furnace, a three-channel float flow meter and a high vacuum molecular pump set.It is suitable for high-temperature sintering, metal annealing, quality inspection, etc. in universities, research institutes, industrial and mining enterprises, especially for CVD experiments that require a variety of gas mixing atmospheres. Vacuum tube furnace Model CY-O1200-50IIT Tube material High purity quartz Tube diameter 50mm (Optional 60mm, 80mm, 100mm) Tube length 1000mm Furnace chamber length 440mm Heating zone length 200mm+200mm Operating temperature 0～1100℃ Temperature control   accuracy ±1℃ Temperature control mode 30 or 50 segment program temperature control Display mode LCD Sealing method 304 stainless steel vacuum flange Flange interface 1/4" ferrule connector, KF16/25/40 joint Vacuum 4.4E-3Pa Power supply AC:220V 50/60Hz Gas supply system Model CY-3F Gas channel 3-channel Measuring unit Gas float flow meter Measuring range A channel: 0～100ml H2 gas Remarks: If you need   other ranges or gas types, you need to specify when ordering. According to the customer's specific requirements, the flow meter of the corresponding gas type and range can be selected. B channel: 16～160ml N2 gas C channel: 25～250ml Ar gas measurement accuracy ±2.0% Pipe pressure   resistance 3MPa Working pressure  difference 50～300KPa Connecting pipe 304 stainless steel Gas channel 304 stainless steel needle valve Interface specification 1/4" cutting sleeve joint for gas inlet and outlet Exhaust system Model CY-GZK103-B Molecular pump CY-600 Backing pump Rotary vane pump Pumping rate Molecular pump: 600L/S Comprehensive gas   pumping performance: 30 minutes vacuum can reach: 1.0E-3Pa Rotary vane pump: 1.1L/S Pumping interface KF40 Exhaust interface KF16 Vacuum measurement Compound vacuum gauge: Resistance gauge + ionization gauge Ultimate vacuum 1.0E-5Pa Power supply AC:220V 50/60Hz

Minimum Order: 1 bags

Chemical vapor deposition (CVD) refers to a method in which chemical gases or steam react on the surface of a substrate to synthesize coatings or nanomaterials. It is the most widely used technology in the semiconductor industry to deposit a variety of materials, including a wide range of insulating materials, Most metal materials and metal alloy materials. CY-O1200-50IIT-3F-LV 1200℃ two heating zone low vacuum CVD furnace consists of a two-heating zone tube furnace, a three-channel float flow meter and a double stage rotary vane vacuum pump. It is suitable for high-temperature sintering, metal annealing, quality inspection, etc. in universities, research institutes, industrial and mining enterprises, especially for CVD experiments that require a variety of gas mixing atmospheres. Vacuum tube furnace Model CY-O1200-50IIT Tube material High purity quartz Tube diameter 50mm (Optional 60mm, 80mm, 100mm) Tube length 1000mm Furnace chamber length 440mm Heating zone length 200mm+200mm Operating temperature 0～1100℃ Temperature control   accuracy ±1℃ Temperature control   mode 30 or 50 segment program temperature control Display mode LCD Sealing method 304 stainless steel vacuum flange Flange interface 1/4" ferrule connector, KF16/25/40 joint Vacuum 4.4E-3Pa Power supply AC:220V 50/60Hz Gas supply system Model CY-3F Gas channel 3-channel Measuring unit Gas float flow meter Measuring range A channel: 0～100ml H2 gas Remarks: If you need   other ranges or gas types, you need to specify when ordering. According to   the customer's specific requirements, the flow meter of the corresponding gas type and range can be selected. B channel: 16～160ml N2 gas C channel: 25～250ml Ar gas measurement accuracy ±2.0% Pipe pressure   resistance 3MPa Working pressure   difference 50～300KPa Connecting pipe 304 stainless steel Gas channel 304 stainless steel needle valve Interface specification 1/4" ferrule connector for gas inlet and outlet Exhaust system Mechanical pump Rotary vane pump Pumping rate 1.1L/S Exhaust interface KF16 Vacuum measurement Resistance gauge Ultimate vacuum 1.0E-1Pa Power supply AC:220V 50/60Hz Pumping interface KF16

Minimum Order: 1 bags

Chemical vapor deposition (CVD) refers to a method in which chemical gases or steam react on the surface of a substrate to synthesize coatings or nanomaterials. It is the most widely used technology in the semiconductor industry to deposit a variety of materials, including a wide range of insulating materials, Most metal materials and metal alloy materials. CY-O1200-50IT-3Z-HV 1200℃ single heating zone high vacuum CVD system consists of a single heating zone tube furnace, a three-channel float flow meter and a high vacuum molecular pump set. It is suitable for high-temperature sintering, metal annealing, quality inspection, etc. in universities, research institutes, industrial and mining enterprises, especially for CVD experiments that require a variety of gas mixing atmospheres. Vacuum tube furnace Model CY-O1200-50IT Tube material High purity quartz Tube diameter 50mm (Optional 60mm/80mm/100mm) Tube length 800mm Furnace chamber length 440mm Heating zone length 400mm Constant temperature   zone 200mm Operating temperature 0～1100℃ Temperature control accuracy ±1℃ Temperature control mode 30 or 50 segment program temperature control Display mode LCD Sealing method 304 stainless steel vacuum flange Flange interface 1/4" ferrule connector, KF16/25/40 joint Vacuum 4.4E-3Pa Power supply AC:220V 50/60Hz Gas supply system Model CY-3Z Gas channel 3-channel Measuring unit Gas mass flowmeter Measuring range A channel: 0～100 SCCM H2 gas Remarks: If you need   other ranges or gas types, you need to specify when ordering. According to the customer's specific requirements, the flow meter of the corresponding gas   type and range can be selected. B channel: 0～300SCCM N2 gas C channel: 0～500SCCM  Ar   gas measurement accuracy ±1.0%F.S Pipe pressure   resistance 3MPa Working pressure  difference 50～300KPa Connecting pipe 304 stainless steel Gas channel 304 stainless steel needle valve Interface specification 1/4" ferrule connector for gas inlet and outlet Exhaust system Model CY-GZK103-A Molecular pump CY-600 Backing pump Rotary vane pump Pumping rate Molecular pump: 600L/S Comprehensive gas pumping performance: the vacuum can reach 1.0E-3Pa in 30 minutes. Rotary vane pump: 1.1L/S Pumping interface KF40 Exhaust interface KF16 Vacuum measurement Compound vacuum gauge: Resistance gauge + ionization gauge Ultimate vacuum 1.0E-5Pa Power supply AC:220V 50/60Hz

Minimum Order: 1 bags