Mosfet 2X2 DFN

Specification:
1. Model FKCB2903 20V, N+P、RDS=40mΩ
2. Model FKCD3014 30V, Single N、RDS=12mΩ
3. Model FKCD3113 -30V, Single P、RDS=32mΩ
4. Model FKCB8236 20V, Dual N、RDS=22mΩ

General description:
It is the N-Channel logic enhancement mode power field effect transistors,
using high cell density, DMOS trench technology. This high density process
is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone,
notebook computer power management and other battery powered circuits, and
lower power loss that are needed in a very small outline surface mount
package.

With more than 15 years of MOSFET experience, MU-HUA is the best MOSFET
supplier manufactures SOT23 MOSFET, TO220 MOSFET and TO252 MOSFET supplying
to the world. The metal–oxide–semiconductor field-effect transistor
(MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET),
most commonly fabricated by the controlled oxidation of silicon. It has an
insulated gate, the voltage of which determines the conductivity of the
device. This ability to change conductivity with the amount of applied
voltage can be used for amplifying or switching electronic signals.

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