​High Purity Mo Ion Implanting Products For Semiconductor Application

During ion implantation, the conversion of the ion source into plasma ions will
produce a working temperature of more than 2000 ℃, and when the ion beam
erupts, it will also produce a lot of ion kinetic energy, and the general metal
will soon be burned. Therefore, inert metals with relatively large mass and
density are needed to maintain the direction of ion beam eruption and increase
the durability of components. Tungsten materials have the advantages of stable
high-temperature chemical properties, small thermal denaturation and long
service life, and have become the first choice of ion sources and consumables
for ion implanters in the semiconductor industry. The shielding cylinder of the
emission cathode, the emission panel, the central fixed rod, the wire electrode
plate in the arc starting chamber, etc. are collectively referred to as ion
implanted tungsten parts



Molybdenum products
Molybdenum plate/sheet/foil (min 0.05mm); MoLa molybdenum tray

molybdenum rod/bar/wire; waveguide molybdenum part for beam guidance

Molybdenum crucible,molybdenum boat/container,molybdenum tube.

Molybdenum heating element for vacuum furnace and high temperature furnace.

Molybdenum part made to required drawings.

Molybdenum alloy TZM alloy,MoLa alloy. molybdenum ion implantation
component for ion implanter
Tungsten products
Tungsten plate/sheet/foil (min 0.05mm); molybdenum alloy MoLa boMoLa tray

Tungsten rod/bar/wire; molybdenum ion implantation component for ion implanter

Tungsten crucible,tungsten boat/container,tungsten tube.

Tungsten heating element for vacuum furnace and high temperature furnace.

Tungsten part made to customer's drawings.

Click to Enlarge