Halogen lamp RTP annealing furnace with real substrate temperature measure

The halogen lamp RTP annealing furnace is a 6-inch wafer rapid annealing furnace.
It adopts innovative heating technology to realize real substrate temperature
measurement. It does not need the temperature compensation of traditional rapid
annealing furnaces. The temperature control is accurate and the temperature is
highly repeatable. Customers include many international semiconductor companies and
well-known scientific research teams. It is an ideal choice for semiconductor
annealing process.

Technical features:
• Real substrate temperature measurement without traditional temperature
compensation
• Infrared halogen tube lamp heating
• Extremely excellent heating temperature accuracy and uniformity
• Fast digital PID temperature control
• Stainless steel cold wall vacuum chamber
• Good system stability
• Compact structure, small desktop system
• PC control with touch screen
• Compatible with normal pressure and vacuum environment, the standard value of
vacuum degree is 5×10-3 Torr, and the vacuum degree is as low as 5×10-6 Torr
using two-stage molecular pump
• Up to 3-channel gases (MFC control)
• No cross contamination, no metal contamination.

Introduction of real substrate temperature measurement technology:
As shown in the figure above, the heat radiated by the array halogen lamp reaches
the surface of the sample through the quartz window, and the sample is heated. The
traditional rapid annealing furnace uses a thermocouple to measure the substrate
temperature. Because the thermocouple is at a certain distance from the substrate,
the measurement is not the substrate. The real temperature of the chip must be
temperature compensated.
The halogen lamp RTP annealing furnace uses a dedicated flake-like Real T/C KIT for
temperature measurement, as shown in the figure above, the contact thermometer is
connected to the flake-like Real T/C KIT. The flake-like Real T/C KIT is located
very close to the sample above when working, the array halogen lamp radiates heat
to the sample surface through the quartz window, the sample is heated, and the
flake-like Real T/C KIT is heated at the same time. Because the substrate is very
close to the Real T/C KIT, there will be heat transfer between them, and the
thermal equilibrium will be quickly reached, so the temperature measured by the
flake-like Real T/C KIT is infinitely close to the real temperature of the
substrate, thus realizing the real measurement of the substrate temperature.

Technical parameters:
Substrate size 6 inches
Substrate base Quartz needle (optional SiC coated graphite base)
Temperature range 150-1250℃
Heating rate 10-150℃/S
Temperature uniformity ≤±1.5% (@800℃, Silicon wafer)
≤±1.0% (@800℃, Substrate on SiC coated graphite susceptor)
Temperature control accuracy ≤ ±3℃
Temperature repeatability ≤ ±3℃
Vacuum 5.0E-3 Torr / 5.0E-6 Torr
Gas supply Standard 1 channel N2 purge and cooling gas circuit, controlled by
MFC (up to 3 channels can be selected)
Annealing duration ≥35min@1250℃
Temperature control Fast digital PID control
Dimensions 870mm*650mm*620mm

Substrate type:
• Silicon wafers
• Compound semiconductor wafers
• GaN/Sapphire wafers for LEDs
• Silicon carbide wafers
• Poly silicon wafers for solar cells
• Glass substrates
• Metals
• Polymers
• Graphite and silicon carbide susceptors

Application areas:
Ion implantation/contact annealing, rapid thermal processing (RTP), rapid annealing
(RTA), rapid thermal oxidation (RTO), rapid thermal nitridation (RTN), can be used
in different environments such as vacuum, inert atmosphere, oxygen, hydrogen, mixed
gas, etc. SiAu, SiAl, SiMo alloying, low dielectric materials, crystallization,
densification, solar cell bonding, etc.

Minimum Order: 1 sets

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