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Contact: ZKHK
Company: Jinjiana Electronic Co.,Ltd
512, A#, Dinghui, Chengshishanhai, Longjingao Rd, Bantian Street, Longgang, Shenzhen
Zhejiang 310015
China
Phone: 19806517920
E-Mail: Send Inquiry 1st year
Date/Time:  10/10/23 8:33 GMT
 

2SC6104

Features Of 2SC6104
NPN bipolar junction transistor

High-power RF transistor designed for use in RF and microwave power amplifier
circuits

High back pressure triode designed to operate with high levels of back
pressure, resulting in higher power output and efficiency

Rated for a maximum collector-emitter voltage (VCEO) of 65V and a maximum
collector current (IC) of 12A

Designed for use at high frequencies with a typical cutoff frequency of 3GHz

High current gain with low input impedance, making it suitable for use in
amplifier circuits

TO-220 package

Suitable for use in high-power RF and microwave amplifier circuits in
applications such as wireless communication, radar systems, and electronic
warfare, among others.

As an electronic components distributor, we can offer sorts of related products
for sale, if you are interested, please contact us.
2SC6104
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