2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing

2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity >
106 Ω·cm RF devices



The growth characteristics of Fe-doped GaN epitaxial layers on semi-insulating SiC (001)
substrates were studied using metalorganic chemical vapor deposition for high
breakdown voltage device applications. A smooth Fe-doped GaN epilayer surface can be
realized by changing the ferrocene flow, while higher Fe concentrations in the GaN
epilayer affect the surface morphology.