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Contact: iris zhang
Company: Zhengzhou CY Scientific Instrument Co., Ltd.
No. 820, 8th Floor, 1st Unit, 9th Block, Cuizhu Street, High-Tech Zone, Zhengzhou, Henan, China
Zhengzhou 450000
China
Phone: +8637155199322
E-Mail: Send Inquiry Member for over 2 years
Date/Time:  11/6/20 9:23 GMT
 

1200℃ 3 zone vacuum CVD reactor for thin film deposit

Chemical vapor deposition (CVD) refers to a method in which chemical gases or steam
react on the surface of a substrate to synthesize coatings or nanomaterials. It is
the most widely used technology in the semiconductor industry to deposit a variety
of materials, including a wide range of insulating materials, Most metal materials
and metal alloy materials.

CY-O1200-50IIIT-3F-HV 1200℃ three heating zone high vacuum CVD system consists of
a three-heating zone tube furnace, a three-channel float flow meter and a high
vacuum molecular pump set.The system is also equipped with a precision molecular
pump set, which can achieve a vacuum degree of 1.0E-3pa, which can provide users
with a purer and more stringent experimental environment than ordinary mechanical
pumps.

Vacuum tube   furnace Model CY-O1200-50IIIT
Tube material High purity quartz
Tube diameter 50mm(optional: 60mm, 80mm, 100mm)
Tube length 1300mm
Furnace chamber length 1060mm
Heating zone   length 300mm+300mm+300mm
Operating   temperature 0~1100℃
Temperature   control accuracy ±1℃
Temperature   control mode 30 or 50 segment program temperature
control
Display mode LCD
Sealing   method 304 stainless steel vacuum flange
Flange   interface 1/4" ferrule connector, KF16/25/40 joint
Vacuum 4.4E-3Pa
Power supply AC:220V   50/60Hz
Gas supply   system Model CY-3F
Gas channel 3-channel
Measuring unit Gas float flowmeter
Measuring   range A channel: 0~100ml H2 gas Remarks: If you
need other ranges or gas types, you need to specify when ordering.   According to
the customer's specific requirements, the flow meter of the   corresponding gas
type and range can be selected.
B channel: 16~160ml N2 gas
C channel: 25~250ml Ar gas
measurement   accuracy ±2.0%
Pipe pressure resistance 3MPa
Working   pressure difference 50~300KPa
Connecting   pipe 304 stainless steel
Gas channel 304 stainless steel needle valve
Interface   specification 1/4" ferrule connector for gas inlet and
outlet
Exhaust   system Model CY-GZK103-A
Molecular pump CY-600
Backing pump Rotary vane pump
Pumping rate Molecular pump: 600L/S Comprehensive   gas pumping
performance: 30 minutes vacuum can reach: 1.0E-3Pa
Rotary vane pump: 1.1L/S
Pumping   interface KF40
Exhaust   interface KF16
Vacuum   measurement Compound vacuum gauge: Resistance gauge +
ionization gauge
Ultimate   vacuum 1.0E-5Pa
Power supply AC:220V   50/60Hz

Minimum Order: 1 sets

1200℃ 3 zone vacuum CVD reactor for thin film deposit
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